to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
notice 1. all information included in this document is current as of th e date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also, please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology de scribed in this document for any purpose re lating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or om issions from the information included herein. 7. renesas electronics products are classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product depends on the product?s quality grade, as indicated below. you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application categorized as ?specific? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intended where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electronics data sheets or data books, etc. ?standard?: computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. ?high quality?: transportation equipment (automobiles, trains, ship s, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specifically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use re nesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of c ontrolled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any fo rm, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this document or renesas electronics products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 10v drive v dss ................................................................................ 350v r ds (on) (max) ................................................................ 0.4 w i d ............................................................................................ 7a v iso ................................................................................ 2000v 350 30 12 36 12 35 C55 ~ +150 C55 ~ +150 2000 2.0 v v a a a w c c v g mitsubishi power mosfet fl12km-7a high-speed switching use nch power mosfet fl12km-7a application inverter type fluorescent light sets, smps to-220fn outline drawing dimensions in mm 15 0.314 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.252.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.33.6 0.3 6.5 0.3 a a gate drain a source v gs = 0v v ds = 0v l = 200 m h ac for 1minute, terminal to case typical value parameter conditions symbol ratings unit v dss v gss i d i dm i da p d t ch t stg v iso drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight maximum ratings (tc = 25 c)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet fl12km-7a high-speed switching use nch power mosfet i d = 1ma, v gs = 0v i gs = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 350v, v gs = 0v i d = 1ma, v ds = 10v i d = 6a, v gs = 10v i d = 6a, v gs = 10v i d = 6a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 6a, v gs = 10v, r gen = r gs = 50 w i s = 6a, v gs = 0v channel to case v v m a ma v w v s pf pf pf ns ns ns ns v c/w 350 30 2.0 3.0 0.32 1.90 10 1050 150 25 20 30 160 60 1.5 10 1.0 4.0 0.40 2.40 2.0 3.57 0 4 8 12 16 20 0 4 8 12 16 20 4v 5v v gs =20v,10v,8v,6v p d = 35w tc = 25 c pulse test output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 2 4 6 8 10 0246810 v gs = 20v,10v,8v,6v output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) tc = 25 c pulse test 5v p d = 35w 4v 10 1 10 0 2 3 5 7 2 3 5 7 2 10 1 357 2 10 2 357 2 2 10 3 357 7 10 1 2 3 5 7 tw = 10 m s t c = 25 c single pulse 100 m s 100ms 10ms 1ms dc maximum safe operating area drain-source voltage v ds (v) drain current i d (a) 0 10 20 30 40 50 0 20050 100 150 power dissipation derating curve case temperature t c ( c) power dissipation p d (w) symbol parameter test conditions limits min. typ. max. unit v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance electrical characteristics (tch = 25 c) performance curves
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet fl12km-7a high-speed switching use nch power mosfet 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25 c 75 c 125 c v ds =10v pulse test 0 4 8 12 16 20 0 4 8 12 16 20 tc = 25 c v ds = 10v pulse test 0 0.2 0.4 0.6 0.8 1.0 10 -1 10 1 2 10 0 357 2 10 2 357 23 57 v gs = 20v tc = 25 c pulse test 10v 0 4 8 12 16 20 0 4 8 12 16 20 tc = 25 c pulse test i d = 24a 12a 6a 10 0 2 10 1 357 2 10 2 357 10 3 57 23 10 1 3 5 7 2 3 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c f = 1mh z v gs = 0v 10 0 10 1 23457 10 2 23457 10 1 10 2 5 2 3 7 5 2 3 5 7 t d(off) t d(on) t r tch = 25 c v gs = 10v v dd = 150v r gen = r gs = 50 w t f on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) on-state resistance vs. drain current (typical) drain current i d (a) gate-source voltage v gs (v) forward transfer admittance vs.drain current (typical) transfer characteristics (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) switching characteristics (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) drain-source on-state voltage v ds (on) (v) drain-source on-state resistance r ds (on) ( w ) drain current i d (a)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet fl12km-7a high-speed switching use nch power mosfet 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? d = 1.0 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 0 1.0 2.0 3.0 4.0 5.0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 5 0 100 150 v gs = 10v i d = 6a pulse test 0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 125 c t c = 75 c 25 c v gs = 0v pulse test 0 4 8 12 16 20 0 20406080100 50v v ds = 100v 200v tch = 25 c i d =12a gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) threshold voltage vs. channel temperature (typical) on-state resistance vs. channel temperature (typical) channel temperature tch ( c) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-c) ( c/w) drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) p dm tw d = t tw t
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